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A3G26D055NT4 Технические параметры
NXP USA Inc. A3G26D055NT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Package / Case | 6-LDFN Exposed Pad | |
| Supplier Device Package | 6-PDFN (7x6.5) | |
| Mfr | NXP USA Inc. | |
| Product Status | Active | |
| Voltage Rated | 125 V | |
| Vds - Drain-Source Breakdown Voltage | 125 V | |
| Vgs th - Gate-Source Threshold Voltage | - 3.5 V | |
| Transistor Polarity | Dual N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 8 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 2500 | |
| Mounting Styles | SMD/SMT | |
| Part # Aliases | 935402445528 | |
| Manufacturer | NXP | |
| Brand | NXP Semiconductors | |
| RoHS | Details | |
| Id - Continuous Drain Current | 3 mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Rds On - Drain-Source Resistance | - | |
| Series | - | |
| Packaging | Cut Tape | |
| Type | RF Power MOSFET | |
| Subcategory | MOSFETs | |
| Current Rating (Amps) | - | |
| Technology | GaN Si | |
| Frequency | 100MHz ~ 2.69GHz | |
| Operating Frequency | 100 MHz to 2690 MHz | |
| Number of Channels | 2 ChannelChannel | |
| Output Power | 8 W | |
| Current - Test | 40 mA | |
| Product Type | RF MOSFET Transistors | |
| Transistor Type | GaN | |
| Gain | 13.9dB | |
| Power - Output | 8W | |
| Noise Figure | - | |
| Voltage - Test | 48 V | |
| Product Category | RF MOSFET Transistors |
Индекс :
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