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A5G35H120NT2 Технические параметры
NXP USA Inc. A5G35H120NT2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Package / Case | 10-PowerLDFN | |
| Supplier Device Package | 10-DFN (7x10) | |
| Mfr | NXP USA Inc. | |
| Package | Tape & Reel (TR) | |
| Product Status | Active | |
| Voltage Rated | 125 V | |
| Vds - Drain-Source Breakdown Voltage | 125 V | |
| Vgs th - Gate-Source Threshold Voltage | - 4.6 V | |
| Shipping Restrictions | This product may require additional documentation to export from the United States. | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 8 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 2000 | |
| Mounting Styles | SMD/SMT | |
| Part # Aliases | 935432729518 | |
| Manufacturer | NXP | |
| Brand | NXP Semiconductors | |
| RoHS | Details |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Id - Continuous Drain Current | 10 mA | |
| Rds On - Drain-Source Resistance | - | |
| Series | - | |
| Packaging | Cut Tape | |
| Type | RF Power MOSFET | |
| Subcategory | MOSFETs | |
| Current Rating (Amps) | - | |
| Technology | GaN Si | |
| Frequency | 3.3GHz ~ 3.7GHz | |
| Operating Frequency | 3300 MHz to 3700 MHz | |
| Number of Channels | 1 ChannelChannel | |
| Output Power | 18 W | |
| Current - Test | 70 mA | |
| Product Type | RF MOSFET Transistors | |
| Transistor Type | - | |
| Gain | 14.1dB | |
| Power - Output | 18W | |
| Noise Figure | - | |
| Voltage - Test | 48 V | |
| Product Category | RF MOSFET Transistors |
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