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AFT09S200W02NR3 Технические параметры
NXP USA Inc. AFT09S200W02NR3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Package / Case | OM-780-2 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Voltage Rated | 70V | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e3 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| HTS Code | 8541.29.00.40 | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Frequency | 960MHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| JESD-30 Code | R-PDFP-F2 | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Current - Test | 1.4A | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS | |
| Gain | 19.2dB | |
| DS Breakdown Voltage-Min | 70V | |
| Power - Output | 56W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 28V | |
| RoHS Status | ROHS3 Compliant |
AFT09S200W02NR3 Документы
- Environmental InformationNXP RoHS3 Cert
Индекс :
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