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AFT23H200-4S2LR6 Технические параметры

NXP USA Inc.  AFT23H200-4S2LR6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Factory Lead Time 10 Weeks
Package / Case NI-1230-4LS2L
Operating Temperature (Max.) 150°C
Voltage Rated 65V
Usage Level Automotive grade
Packaging Tape & Reel (TR)
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
HTS Code 8541.29.00.40
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Frequency 2.3GHz
Time@Peak Reflow Temperature-Max (s) 40
Current - Test 500mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 15.3dB
Power - Output 45W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 294W
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Просмотр сходства

AFT23H200-4S2LR6 Документы

AFT23H200-4S2LR6 brand manufacturers: NXP USA Inc., Anli stock, AFT23H200-4S2LR6 reference price.NXP USA Inc.. AFT23H200-4S2LR6 parameters, AFT23H200-4S2LR6 Datasheet PDF and pin diagram description download.You can use the AFT23H200-4S2LR6 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find AFT23H200-4S2LR6 pin diagram and circuit diagram and usage method of function,AFT23H200-4S2LR6 electronics tutorials.You can download from the Anli.