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AFT26H200W03SR6 Технические параметры

NXP USA Inc.  AFT26H200W03SR6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Factory Lead Time 10 Weeks
Package / Case NI-1230-4S
Operating Temperature (Max.) 225°C
Voltage Rated 65V
Packaging Tape & Reel (TR)
Published 2006
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
HTS Code 8541.29.00.40
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Frequency 2.5GHz
Time@Peak Reflow Temperature-Max (s) 40
Configuration Single
Current - Test 500mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 14.1dB
Power - Output 45W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Просмотр сходства

AFT26H200W03SR6 Документы

AFT26H200W03SR6 brand manufacturers: NXP USA Inc., Anli stock, AFT26H200W03SR6 reference price.NXP USA Inc.. AFT26H200W03SR6 parameters, AFT26H200W03SR6 Datasheet PDF and pin diagram description download.You can use the AFT26H200W03SR6 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find AFT26H200W03SR6 pin diagram and circuit diagram and usage method of function,AFT26H200W03SR6 electronics tutorials.You can download from the Anli.