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AFT26HW050GSR3 Технические параметры

NXP USA Inc.  AFT26HW050GSR3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Factory Lead Time 10 Weeks
Package / Case NI-780GS
Operating Temperature (Max.) 150°C
Voltage Rated 65V
Packaging Tape & Reel (TR)
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
HTS Code 8541.29.00.40
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Frequency 2.69GHz
Time@Peak Reflow Temperature-Max (s) 40
Configuration Single
Current - Test 100mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 14.2dB
Power - Output 9W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Просмотр сходства

AFT26HW050GSR3 Документы

AFT26HW050GSR3 brand manufacturers: NXP USA Inc., Anli stock, AFT26HW050GSR3 reference price.NXP USA Inc.. AFT26HW050GSR3 parameters, AFT26HW050GSR3 Datasheet PDF and pin diagram description download.You can use the AFT26HW050GSR3 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find AFT26HW050GSR3 pin diagram and circuit diagram and usage method of function,AFT26HW050GSR3 electronics tutorials.You can download from the Anli.