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AFT26HW050SR3 Технические параметры

NXP USA Inc.  AFT26HW050SR3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Factory Lead Time 10 Weeks
Package / Case NI-780-4S4
Operating Temperature (Max.) 150°C
Voltage Rated 65V
Packaging Tape & Reel (TR)
Published 2006
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
HTS Code 8541.29.00.40
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Frequency 2.69GHz
Time@Peak Reflow Temperature-Max (s) 40
Configuration Single
Current - Test 100mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 14.2dB
Power - Output 9W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Просмотр сходства

AFT26HW050SR3 Документы

AFT26HW050SR3 brand manufacturers: NXP USA Inc., Anli stock, AFT26HW050SR3 reference price.NXP USA Inc.. AFT26HW050SR3 parameters, AFT26HW050SR3 Datasheet PDF and pin diagram description download.You can use the AFT26HW050SR3 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find AFT26HW050SR3 pin diagram and circuit diagram and usage method of function,AFT26HW050SR3 electronics tutorials.You can download from the Anli.