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BA891,115 Технические параметры

NXP USA Inc.  BA891,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 13 Weeks
Package / Case SC-79, SOD-523
Surface Mount YES
Diode Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 715mW
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
HTS Code 8541.10.00.70
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BA891
Pin Count 2
JESD-30 Code R-PDSO-F2
Qualification Status Not Qualified
Diode Type Standard - Single
Output Current-Max 0.1A
Capacitance @ Vr, F 0.9pF @ 3V 1MHz
Forward Voltage-Max 1V
Voltage - Peak Reverse (Max) 35V
Frequency Band VERY HIGH FREQUENCY
Resistance @ If, F 500mOhm @ 10mA 100MHz
Diode Capacitance-Max 1.05pF
RoHS Status ROHS3 Compliant

BA891,115 Документы

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