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BAP1321-02,115 Технические параметры

NXP USA Inc.  BAP1321-02,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Package / Case SC-79, SOD-523
Surface Mount YES
Diode Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 715mW
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Applications ATTENUATOR; SWITCHING
Additional Feature HIGH VOLTAGE
HTS Code 8541.10.00.70
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAP1321
Pin Count 2
JESD-30 Code R-PDSO-F2
Qualification Status Not Qualified
Diode Type PIN - Single
Capacitance @ Vr, F 0.32pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 60V
Breakdown Voltage-Min 60V
Frequency Band S B
Diode Capacitance-Nom 0.4pF
Resistance @ If, F 1.3Ohm @ 100mA 100MHz
Diode Capacitance-Max 0.45pF
Minority Carrier Lifetime-Nom 0.5 µs
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
RoHS Status ROHS3 Compliant
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BAP1321-02,115 Документы

BAP1321-02,115 brand manufacturers: NXP USA Inc., Anli stock, BAP1321-02,115 reference price.NXP USA Inc.. BAP1321-02,115 parameters, BAP1321-02,115 Datasheet PDF and pin diagram description download.You can use the BAP1321-02,115 Diodes - RF, DSP Datesheet PDF, find BAP1321-02,115 pin diagram and circuit diagram and usage method of function,BAP1321-02,115 electronics tutorials.You can download from the Anli.