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BAP51-03,115 Технические параметры

NXP USA Inc.  BAP51-03,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 13 Weeks
Package / Case SC-76, SOD-323
Surface Mount YES
Diode Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 500mW
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
HTS Code 8541.10.00.70
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP51
Pin Count 2
JESD-30 Code R-PDSO-G2
Qualification Status Not Qualified
Diode Type PIN - Single
Capacitance @ Vr, F 0.35pF @ 5V 1MHz
Voltage - Peak Reverse (Max) 50V
Breakdown Voltage-Min 60V
Reverse Test Voltage 1V
Diode Capacitance-Nom 0.55pF
Resistance @ If, F 2.5Ohm @ 10mA 100MHz
Diode Capacitance-Max 0.55pF
Minority Carrier Lifetime-Nom 0.55 µs
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
RoHS Status ROHS3 Compliant
Просмотр сходства
BAP51-03,115 brand manufacturers: NXP USA Inc., Anli stock, BAP51-03,115 reference price.NXP USA Inc.. BAP51-03,115 parameters, BAP51-03,115 Datasheet PDF and pin diagram description download.You can use the BAP51-03,115 Diodes - RF, DSP Datesheet PDF, find BAP51-03,115 pin diagram and circuit diagram and usage method of function,BAP51-03,115 electronics tutorials.You can download from the Anli.