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BAP51-04W,115 Технические параметры
NXP USA Inc. BAP51-04W,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | ||
| Factory Lead Time | 13 Weeks | |
| Package / Case | SC-70, SOT-323 | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Power Dissipation (Max) | 240mW | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | TIN | |
| HTS Code | 8541.10.00.70 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BAP51-04 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | |
| Diode Type | PIN - 1 Pair Series Connection | |
| Capacitance @ Vr, F | 0.35pF @ 5V 1MHz | |
| Voltage - Peak Reverse (Max) | 50V | |
| Resistance @ If, F | 2.5Ohm @ 10mA 100MHz | |
| Diode Capacitance-Max | 0.55pF | |
| Minority Carrier Lifetime-Nom | 0.55 µs | |
| RoHS Status | ROHS3 Compliant |
BAP51-04W,115 Документы
- DatasheetsBAP51-04W
- Environmental InformationNXP RoHS3 Cert
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