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BAP51LX,315 Технические параметры

NXP USA Inc.  BAP51LX,315 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 10 Weeks
Package / Case SOD-882
Surface Mount YES
Diode Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 140mW
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Applications ATTENUATOR; SWITCHING
HTS Code 8541.10.00.70
Terminal Position DUAL
Terminal Form NO LEAD
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP51
Pin Count 2
JESD-30 Code R-PDSO-N2
Qualification Status Not Qualified
Diode Type PIN - Single
Capacitance @ Vr, F 0.3pF @ 5V 1MHz
Voltage - Peak Reverse (Max) 60V
Breakdown Voltage-Min 60V
Frequency Band S B
Diode Capacitance-Nom 0.3pF
Resistance @ If, F 1.5Ohm @ 100mA 100MHz
Diode Capacitance-Max 0.4pF
Minority Carrier Lifetime-Nom 0.55 µs
Diode Res Test Current 500mA
Diode Res Test Frequency 100MHz
RoHS Status ROHS3 Compliant
Просмотр сходства
BAP51LX,315 brand manufacturers: NXP USA Inc., Anli stock, BAP51LX,315 reference price.NXP USA Inc.. BAP51LX,315 parameters, BAP51LX,315 Datasheet PDF and pin diagram description download.You can use the BAP51LX,315 Diodes - RF, DSP Datesheet PDF, find BAP51LX,315 pin diagram and circuit diagram and usage method of function,BAP51LX,315 electronics tutorials.You can download from the Anli.