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BAP55L,315 Технические параметры
NXP USA Inc. BAP55L,315 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | ||
| Package / Case | SOD-882 | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 500mW | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN | |
| Applications | ATTENUATOR; SWITCHING | |
| HTS Code | 8541.10.00.80 | |
| Terminal Position | BOTTOM |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | BAP55 | |
| Pin Count | 2 | |
| JESD-30 Code | R-PBCC-N2 | |
| Qualification Status | Not Qualified | |
| Diode Type | PIN - Single | |
| Capacitance @ Vr, F | 0.28pF @ 20V 1MHz | |
| Voltage - Peak Reverse (Max) | 50V | |
| Source Url Status Check Date | 2013-10-15 00:00:00 | |
| Frequency Band | S B | |
| Resistance @ If, F | 700mOhm @ 100mA 100MHz | |
| Diode Capacitance-Max | 0.28pF | |
| Minority Carrier Lifetime-Nom | 0.28 µs | |
| Diode Forward Resistance-Max | 0.7Ohm | |
| RoHS Status | ROHS3 Compliant |
BAP55L,315 Документы
- DatasheetsBAP55L
- Environmental InformationNXP RoHS3 Cert
- PCN PackagingDate Code Extended 18/Jul/2013
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