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BAP55LX,315 Технические параметры
NXP USA Inc. BAP55LX,315 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Package / Case | 2-XDFN | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 135mW | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Terminal Finish | Tin (Sn) | |
| Applications | ATTENUATOR; SWITCHING | |
| HTS Code | 8541.10.00.70 | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BAP55 | |
| Pin Count | 2 | |
| JESD-30 Code | R-PDSO-N2 | |
| Qualification Status | Not Qualified | |
| Diode Type | PIN - Single | |
| Capacitance @ Vr, F | 0.28pF @ 20V 1MHz | |
| Voltage - Peak Reverse (Max) | 50V | |
| Breakdown Voltage-Min | 50V | |
| Reverse Test Voltage | 20V | |
| Frequency Band | S B | |
| Diode Capacitance-Nom | 0.28pF | |
| Resistance @ If, F | 800mOhm @ 100mA 100MHz | |
| Diode Capacitance-Max | 0.28pF | |
| Minority Carrier Lifetime-Nom | 0.27 µs | |
| Diode Res Test Current | 0.5mA | |
| Diode Res Test Frequency | 100MHz | |
| Diode Forward Resistance-Max | 4.5Ohm | |
| RoHS Status | ROHS3 Compliant |
BAP55LX,315 Документы
- DatasheetsBAP55LX
- Environmental InformationNXP RoHS3 Cert
- PCN Assembly/OriginWafer Manufacturing Transfer 24/Dec/2013
- PCN PackagingLighter Reels 02/Jan/2014 Leadframe Material Update 20/Mar/2014
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