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BAP64Q,125 Технические параметры

NXP USA Inc.  BAP64Q,125 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 8 Weeks
Package / Case SC-74A, SOT-753
Surface Mount YES
Diode Element Material SILICON
Number of Elements 4 Elements
Power Dissipation (Max) 125mW
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
Terminal Finish Tin (Sn)
Applications ATTENUATOR
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Base Part Number BAP64Q
Pin Count 5
Reference Standard IEC-60134
JESD-30 Code R-PDSO-G5
Configuration COMPLEX
Diode Type PIN - 2 Pair CA + CC
Capacitance @ Vr, F 0.35pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 100V
Reverse Test Voltage 100V
Source Url Status Check Date 2013-06-14 00:00:00
Frequency Band S B
Diode Capacitance-Nom 0.23pF
Resistance @ If, F 1.35Ohm @ 100mA 100MHz
Diode Capacitance-Max 0.35pF
Minority Carrier Lifetime-Nom 1.55 µs
Diode Res Test Current 100mA
Diode Res Test Frequency 100MHz
RoHS Status ROHS3 Compliant
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BAP64Q,125 Документы

BAP64Q,125 brand manufacturers: NXP USA Inc., Anli stock, BAP64Q,125 reference price.NXP USA Inc.. BAP64Q,125 parameters, BAP64Q,125 Datasheet PDF and pin diagram description download.You can use the BAP64Q,125 Diodes - RF, DSP Datesheet PDF, find BAP64Q,125 pin diagram and circuit diagram and usage method of function,BAP64Q,125 electronics tutorials.You can download from the Anli.