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BAP65-02,135 Технические параметры

NXP USA Inc.  BAP65-02,135 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 13 Weeks
Package / Case SC-79, SOD-523
Surface Mount YES
Power Dissipation (Max) 715mW
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
HTS Code 8541.10.00.70
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP65
Pin Count 2
Diode Type PIN - Single
Capacitance @ Vr, F 0.375pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 30V
Breakdown Voltage-Min 30V
Diode Capacitance-Nom 0.65pF
Resistance @ If, F 350mOhm @ 100mA 100MHz
Minority Carrier Lifetime-Nom 0.17 µs
Diode Res Test Current 5mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 0.95Ohm
RoHS Status ROHS3 Compliant
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BAP65-02,135 Документы

BAP65-02,135 brand manufacturers: NXP USA Inc., Anli stock, BAP65-02,135 reference price.NXP USA Inc.. BAP65-02,135 parameters, BAP65-02,135 Datasheet PDF and pin diagram description download.You can use the BAP65-02,135 Diodes - RF, DSP Datesheet PDF, find BAP65-02,135 pin diagram and circuit diagram and usage method of function,BAP65-02,135 electronics tutorials.You can download from the Anli.