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BAP65-05,215 Технические параметры

NXP USA Inc.  BAP65-05,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 13 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Diode Element Material SILICON
Number of Elements 2 Elements
Power Dissipation (Max) 250mW
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Applications ATTENUATOR; SWITCHING
HTS Code 8541.10.00.70
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP65-05
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration COMMON CATHODE, 2 ELEMENTS
Diode Type PIN - 1 Pair Common Cathode
JEDEC-95 Code TO-236AB
Capacitance @ Vr, F 0.425pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 30V
Breakdown Voltage-Min 30V
Diode Capacitance-Nom 0.7pF
Resistance @ If, F 350mOhm @ 100mA 100MHz
Diode Capacitance-Max 0.9pF
Minority Carrier Lifetime-Nom 0.17 µs
Diode Res Test Current 5mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 0.9Ohm
RoHS Status ROHS3 Compliant
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BAP65-05,215 Документы

BAP65-05,215 brand manufacturers: NXP USA Inc., Anli stock, BAP65-05,215 reference price.NXP USA Inc.. BAP65-05,215 parameters, BAP65-05,215 Datasheet PDF and pin diagram description download.You can use the BAP65-05,215 Diodes - RF, DSP Datesheet PDF, find BAP65-05,215 pin diagram and circuit diagram and usage method of function,BAP65-05,215 electronics tutorials.You can download from the Anli.