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BAP70AM,115 Технические параметры

NXP USA Inc.  BAP70AM,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 13 Weeks
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Diode Element Material SILICON
Number of Elements 4 Elements
Power Dissipation (Max) 300mW
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Applications ATTENUATOR
Additional Feature LOW DISTORTION
HTS Code 8541.10.00.70
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP70A
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Configuration 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Type PIN - 2 Pair Series
Capacitance @ Vr, F 0.25pF @ 20V 1MHz
Forward Voltage-Max 1.1V
Reverse Current-Max 0.1μA
Voltage - Peak Reverse (Max) 50V
Reverse Test Voltage 50V
Resistance @ If, F 1.9Ohm @ 100mA 100MHz
Diode Capacitance-Max 0.25pF
Minority Carrier Lifetime-Nom 1.25 µs
RoHS Status ROHS3 Compliant
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BAP70AM,115 Документы

BAP70AM,115 brand manufacturers: NXP USA Inc., Anli stock, BAP70AM,115 reference price.NXP USA Inc.. BAP70AM,115 parameters, BAP70AM,115 Datasheet PDF and pin diagram description download.You can use the BAP70AM,115 Diodes - RF, DSP Datesheet PDF, find BAP70AM,115 pin diagram and circuit diagram and usage method of function,BAP70AM,115 electronics tutorials.You can download from the Anli.