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BAW62,113 Технические параметры
NXP USA Inc. BAW62,113 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | DO-204AH, DO-35, Axial | |
| Surface Mount | NO | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 200°C | |
| Power Dissipation (Max) | 0.35W | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| HTS Code | 8541.10.00.80 | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | BAW62 | |
| Pin Count | 2 | |
| Reference Standard | CECC50001-021 | |
| JESD-30 Code | O-LALF-W2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 5μA @ 75V | |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 100mA | |
| Case Connection | ISOLATED | |
| Operating Temperature - Junction | 200°C Max | |
| Output Current-Max | 0.25A | |
| Voltage - DC Reverse (Vr) (Max) | 75V | |
| Current - Average Rectified (Io) | 250mA DC | |
| Reverse Recovery Time | 4ns | |
| Rep Pk Reverse Voltage-Max | 75V | |
| Capacitance @ Vr, F | 2pF @ 0V 1MHz | |
| Non-rep Pk Forward Current-Max | 2A | |
| Reverse Current-Max | 5μA | |
| RoHS Status | ROHS3 Compliant |
Индекс :
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