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BC847AW Технические параметры
NXP USA Inc. BC847AW technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Package / Case | SC-70, SOT-323 | |
| Mounting Type | Surface Mount | |
| Surface Mount | YES | |
| Supplier Device Package | SOT-323 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NXP USA Inc. | |
| Current-Collector (Ic) (Max) | 100 mA | |
| Product Status | Active | |
| Package | Bulk | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| Manufacturer Part Number | BC847AW | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Diotec Semiconductor AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Ihs Manufacturer | DIOTEC SEMICONDUCTOR AG | |
| Risk Rank | 0.55 | |
| Series | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Power - Max | 200 mW | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V | |
| Current - Collector Cutoff (Max) | 15nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | |
| Frequency - Transition | 100MHz | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 110 | |
| Collector-Emitter Voltage-Max | 45 V |
Индекс :
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