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BC857B/DG/B3215 Технические параметры

NXP USA Inc.  BC857B/DG/B3215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB
Mfr NXP USA Inc.
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 100 mA
Свойство продукта Значение свойства
Series -
Operating Temperature 150°C (TJ)
Power - Max 250 mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V
Current - Collector Cutoff (Max) 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Frequency - Transition 100MHz
Просмотр сходства
BC857B/DG/B3215 brand manufacturers: NXP USA Inc., Anli stock, BC857B/DG/B3215 reference price.NXP USA Inc.. BC857B/DG/B3215 parameters, BC857B/DG/B3215 Datasheet PDF and pin diagram description download.You can use the BC857B/DG/B3215 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC857B/DG/B3215 pin diagram and circuit diagram and usage method of function,BC857B/DG/B3215 electronics tutorials.You can download from the Anli.