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BF1100WR,115 Технические параметры

NXP USA Inc.  BF1100WR,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Package / Case SC-82A, SOT-343
Surface Mount YES
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature (Max.) 150°C
Voltage Rated 14V
Packaging Tape & Reel (TR)
Published 1995
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Current Rating (Amps) 30mA
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Reach Compliance Code unknown
Frequency 800MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BF1100
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration COMPLEX
Operating Mode DUAL GATE, ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 10mA
Transistor Application AMPLIFIER
Transistor Type N-Channel Dual Gate
Drain Current-Max (Abs) (ID) 0.03A
DS Breakdown Voltage-Min 14V
FET Technology METAL-OXIDE SEMICONDUCTOR
Noise Figure 2dB
Voltage - Test 9V
Feedback Cap-Max (Crss) 0.035 pF
RoHS Status ROHS3 Compliant

BF1100WR,115 Документы

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