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BF1208,115 Технические параметры
NXP USA Inc. BF1208,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Package / Case | SOT-563, SOT-666 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature (Max.) | 150°C | |
| Voltage Rated | 6V | |
| Packaging | Tape & Reel (TR) | |
| Published | 2004 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Terminal Finish | TIN | |
| HTS Code | 8541.21.00.75 | |
| Current Rating (Amps) | 30mA | |
| Terminal Form | FLAT |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Frequency | 400MHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-F6 | |
| Qualification Status | Not Qualified | |
| Operating Mode | ENHANCEMENT MODE | |
| Current - Test | 19mA | |
| Transistor Application | AMPLIFIER | |
| Transistor Type | N-Channel Dual Gate | |
| Gain | 32dB | |
| Drain Current-Max (Abs) (ID) | 0.03A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.18W | |
| Noise Figure | 1.3dB | |
| Voltage - Test | 5V | |
| RoHS Status | ROHS3 Compliant |
BF1208,115 Документы
- DatasheetsBF1208
- Environmental InformationNXP RoHS3 Cert
- PCN Obsolescence/ EOLMultiple Devices 26/Dec/2012 Multiple Devices Dec/2012
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