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BF1212WR,115 Технические параметры

NXP USA Inc.  BF1212WR,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Package / Case SC-82A, SOT-343
Surface Mount YES
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature (Max.) 150°C
Voltage Rated 6V
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Current Rating (Amps) 30mA
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Свойство продукта Значение свойства
Frequency 400MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BF1212
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode DUAL GATE, ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 12mA
Transistor Application AMPLIFIER
Transistor Type N-Channel Dual Gate
Gain 30dB
Drain Current-Max (Abs) (ID) 0.03A
DS Breakdown Voltage-Min 6V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.18W
Noise Figure 0.9dB
Voltage - Test 5V
Feedback Cap-Max (Crss) 0.03 pF
RoHS Status ROHS3 Compliant

BF1212WR,115 Документы

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