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BF245B,112 Технические параметры
NXP USA Inc. BF245B,112 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Voltage Rated | 30V | |
| Packaging | Bulk | |
| Published | 1996 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| HTS Code | 8541.21.00.75 | |
| Current Rating (Amps) | 15mA | |
| Terminal Position | BOTTOM |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Frequency | 100MHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BF245 | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Transistor Application | AMPLIFIER | |
| Transistor Type | N-Channel JFET | |
| Drain Current-Max (Abs) (ID) | 0.025A | |
| DS Breakdown Voltage-Min | 30V | |
| FET Technology | JUNCTION | |
| Power Dissipation-Max (Abs) | 0.3W | |
| Noise Figure | 1.5dB | |
| Voltage - Test | 15V | |
| RoHS Status | ROHS3 Compliant |
BF245B,112 Документы
- DatasheetsBF245A,B,C
- PCN Obsolescence/ EOLMultiple Devices 31/Dec/2011
- PCN PackagingDate Code Extended 18/Jul/2013
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