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NXP USA Inc. BF909AWR,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - RF | |
Марка | ||
Package / Case | SC-82A, SOT-343 | |
Surface Mount | YES | |
Transistor Element Material | SILICON | |
Number of Elements | 2 Elements | |
Operating Temperature (Max.) | 150°C | |
Voltage Rated | 7V | |
Packaging | Tape & Reel (TR) | |
Published | 1997 | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 4Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | TIN | |
HTS Code | 8541.21.00.75 | |
Current Rating (Amps) | 40mA | |
Terminal Form | GULL WING |
Свойство продукта | Значение свойства | |
---|---|---|
Peak Reflow Temperature (Cel) | 260 | |
Reach Compliance Code | unknown | |
Frequency | 800MHz | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Base Part Number | BF909 | |
JESD-30 Code | R-PDSO-G4 | |
Qualification Status | Not Qualified | |
Configuration | COMPLEX | |
Operating Mode | DUAL GATE, ENHANCEMENT MODE | |
Case Connection | SOURCE | |
Current - Test | 15mA | |
Transistor Application | AMPLIFIER | |
Transistor Type | N-Channel Dual Gate | |
Drain Current-Max (Abs) (ID) | 0.04A | |
DS Breakdown Voltage-Min | 7V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Noise Figure | 2dB | |
Voltage - Test | 5V | |
Feedback Cap-Max (Crss) | 0.05 pF | |
RoHS Status | ROHS3 Compliant |