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BFG10/X,215 Технические параметры

NXP USA Inc.  BFG10/X,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Current-Collector (Ic) (Max) 250mA
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1997
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BFG10
Power - Max 400mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 50mA 5V
Gain 7dB
Voltage - Collector Emitter Breakdown (Max) 8V
Frequency - Transition 1.9GHz
RoHS Status ROHS3 Compliant
Просмотр сходства

BFG10/X,215 Документы

BFG10/X,215 brand manufacturers: NXP USA Inc., Anli stock, BFG10/X,215 reference price.NXP USA Inc.. BFG10/X,215 parameters, BFG10/X,215 Datasheet PDF and pin diagram description download.You can use the BFG10/X,215 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFG10/X,215 pin diagram and circuit diagram and usage method of function,BFG10/X,215 electronics tutorials.You can download from the Anli.