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BFG135,115 Технические параметры

NXP USA Inc.  BFG135,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 150mA
Number of Elements 1 Element
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1995
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT-IN EMITTER BALLASTING RESISTORS
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BFG135
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA 10V
Voltage - Collector Emitter Breakdown (Max) 15V
Transition Frequency 7000MHz
Frequency - Transition 7GHz
Power Dissipation-Max (Abs) 1W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Power Dissipation Ambient-Max 1W
RoHS Status ROHS3 Compliant
Просмотр сходства

BFG135,115 Документы

BFG135,115 brand manufacturers: NXP USA Inc., Anli stock, BFG135,115 reference price.NXP USA Inc.. BFG135,115 parameters, BFG135,115 Datasheet PDF and pin diagram description download.You can use the BFG135,115 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFG135,115 pin diagram and circuit diagram and usage method of function,BFG135,115 electronics tutorials.You can download from the Anli.