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BFG21W,115 Технические параметры

NXP USA Inc.  BFG21W,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 500mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFG21
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE
Case Connection EMITTER
Power - Max 600mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA 2V
Voltage - Collector Emitter Breakdown (Max) 4.5V
Transition Frequency 18000MHz
Frequency - Transition 18GHz
Power Dissipation-Max (Abs) 0.67W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 3pF
RoHS Status ROHS3 Compliant

BFG21W,115 Документы

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