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BFG35,115 Технические параметры

NXP USA Inc.  BFG35,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 16 Weeks
Surface Mount YES
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 150mA
Number of Elements 1 Element
Published 1995
Packaging Tape & Reel (TR)
Operating Temperature 175°C TJ
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFG35
Pin Count 4
Reference Standard CECC
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 100mA 10V
Voltage - Collector Emitter Breakdown (Max) 18V
Transition Frequency 4000MHz
Frequency - Transition 4GHz
Power Dissipation-Max (Abs) 1W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Power Dissipation Ambient-Max 1W
RoHS Status ROHS3 Compliant
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BFG35,115 Документы

BFG35,115 brand manufacturers: NXP USA Inc., Anli stock, BFG35,115 reference price.NXP USA Inc.. BFG35,115 parameters, BFG35,115 Datasheet PDF and pin diagram description download.You can use the BFG35,115 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFG35,115 pin diagram and circuit diagram and usage method of function,BFG35,115 electronics tutorials.You can download from the Anli.