ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply

BFG410W,115 Технические параметры

NXP USA Inc.  BFG410W,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 12mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BFG410
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE
Case Connection EMITTER
Power - Max 54mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 2V
Gain 21dB
Voltage - Collector Emitter Breakdown (Max) 4.5V
Transition Frequency 22000MHz
Frequency - Transition 22GHz
Power Dissipation-Max (Abs) 0.054W
Highest Frequency Band L B
Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
Power Dissipation Ambient-Max 0.054W
RoHS Status ROHS3 Compliant

BFG410W,115 Документы

BFG410W,115 brand manufacturers: NXP USA Inc., Anli stock, BFG410W,115 reference price.NXP USA Inc.. BFG410W,115 parameters, BFG410W,115 Datasheet PDF and pin diagram description download.You can use the BFG410W,115 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFG410W,115 pin diagram and circuit diagram and usage method of function,BFG410W,115 electronics tutorials.You can download from the Anli.