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BFG424F,115 Технические параметры

NXP USA Inc.  BFG424F,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case SOT-343 Reverse Pinning
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 30mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BFG424
Pin Count 4
JESD-30 Code R-PDSO-F4
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 135mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 2V
Gain 23dB
Voltage - Collector Emitter Breakdown (Max) 4.5V
Transition Frequency 25000MHz
Frequency - Transition 25GHz
Power Dissipation-Max (Abs) 0.135W
Highest Frequency Band L B
Noise Figure (dB Typ @ f) 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
RoHS Status ROHS3 Compliant
Просмотр сходства

BFG424F,115 Документы

BFG424F,115 brand manufacturers: NXP USA Inc., Anli stock, BFG424F,115 reference price.NXP USA Inc.. BFG424F,115 parameters, BFG424F,115 Datasheet PDF and pin diagram description download.You can use the BFG424F,115 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFG424F,115 pin diagram and circuit diagram and usage method of function,BFG424F,115 electronics tutorials.You can download from the Anli.