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BFG480W,115 Технические параметры

NXP USA Inc.  BFG480W,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 250mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BFG480
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE
Case Connection EMITTER
Power - Max 360mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 80mA 2V
Gain 16dB
Voltage - Collector Emitter Breakdown (Max) 4.5V
Transition Frequency 21000MHz
Frequency - Transition 21GHz
Power Dissipation-Max (Abs) 0.36W
Highest Frequency Band L B
Noise Figure (dB Typ @ f) 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
RoHS Status ROHS3 Compliant
Просмотр сходства

BFG480W,115 Документы

BFG480W,115 brand manufacturers: NXP USA Inc., Anli stock, BFG480W,115 reference price.NXP USA Inc.. BFG480W,115 parameters, BFG480W,115 Datasheet PDF and pin diagram description download.You can use the BFG480W,115 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFG480W,115 pin diagram and circuit diagram and usage method of function,BFG480W,115 electronics tutorials.You can download from the Anli.