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BFG505/X,215 Технические параметры

NXP USA Inc.  BFG505/X,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 18mA
Number of Elements 1 Element
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BFG505
Pin Count 4
Reference Standard CECC
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 150mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 6V
Voltage - Collector Emitter Breakdown (Max) 15V
Transition Frequency 9000MHz
Frequency - Transition 9GHz
Power Dissipation-Max (Abs) 0.15W
Highest Frequency Band L B
Noise Figure (dB Typ @ f) 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz
Power Dissipation Ambient-Max 0.15W
RoHS Status ROHS3 Compliant

BFG505/X,215 Документы

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