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BFG540W,115 Технические параметры

NXP USA Inc.  BFG540W,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case SOT-343 Reverse Pinning
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 120mA
Number of Elements 1 Element
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1995
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFG540
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 40mA 8V
Voltage - Collector Emitter Breakdown (Max) 15V
Transition Frequency 9000MHz
Frequency - Transition 9GHz
Power Dissipation-Max (Abs) 0.5W
Highest Frequency Band L B
Noise Figure (dB Typ @ f) 1.3dB ~ 1.8dB @ 900MHz
Power Dissipation Ambient-Max 0.5W
RoHS Status ROHS3 Compliant

BFG540W,115 Документы

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