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BFR106,215 Технические параметры

NXP USA Inc.  BFR106,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BFR106
Pin Count 3
Reference Standard CECC
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 500mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 50mA 9V
Voltage - Collector Emitter Breakdown (Max) 15V
Transition Frequency 5000MHz
Frequency - Transition 5GHz
Power Dissipation-Max (Abs) 0.35W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Noise Figure (dB Typ @ f) 3.5dB @ 800MHz
Power Dissipation Ambient-Max 0.5W
RoHS Status ROHS3 Compliant

BFR106,215 Документы

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