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BFT25,215 Технические параметры

NXP USA Inc.  BFT25,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 6.5mA
Number of Elements 1 Element
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFT25
Pin Count 3
Reference Standard CECC
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 30mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1mA 1V
Voltage - Collector Emitter Breakdown (Max) 5V
Transition Frequency 2300MHz
Frequency - Transition 2.3GHz
Power Dissipation-Max (Abs) 0.3W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.6pF
Noise Figure (dB Typ @ f) 5.5dB @ 500MHz
Power Dissipation Ambient-Max 0.03W
RoHS Status ROHS3 Compliant
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BFT25,215 Документы

BFT25,215 brand manufacturers: NXP USA Inc., Anli stock, BFT25,215 reference price.NXP USA Inc.. BFT25,215 parameters, BFT25,215 Datasheet PDF and pin diagram description download.You can use the BFT25,215 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFT25,215 pin diagram and circuit diagram and usage method of function,BFT25,215 electronics tutorials.You can download from the Anli.