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NXP USA Inc. BFT25A,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Bipolar (BJT) - RF | |
Марка | ||
Factory Lead Time | 8 Weeks | |
Mounting Type | Surface Mount | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Surface Mount | YES | |
Transistor Element Material | SILICON | |
Current-Collector (Ic) (Max) | 6.5mA | |
Number of Elements | 1 Element | |
Operating Temperature | 175°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2001 | |
JESD-609 Code | e3 | |
Part Status | Not For New Designs | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin (Sn) | |
Additional Feature | HIGH RELIABILITY | |
HTS Code | 8541.21.00.75 | |
Terminal Position | DUAL | |
Terminal Form | GULL WING |
Свойство продукта | Значение свойства | |
---|---|---|
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Base Part Number | BFT25 | |
Pin Count | 3 | |
Reference Standard | CECC | |
JESD-30 Code | R-PDSO-G3 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE | |
Power - Max | 32mW | |
Transistor Application | AMPLIFIER | |
Polarity/Channel Type | NPN | |
Transistor Type | NPN | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500μA 1V | |
Voltage - Collector Emitter Breakdown (Max) | 5V | |
Transition Frequency | 5000MHz | |
Frequency - Transition | 5GHz | |
Power Dissipation-Max (Abs) | 0.032W | |
Highest Frequency Band | L B | |
Collector-Base Capacitance-Max | 0.45pF | |
Noise Figure (dB Typ @ f) | 1.8dB ~ 2dB @ 1GHz | |
Power Dissipation Ambient-Max | 0.032W | |
RoHS Status | ROHS3 Compliant |