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BFT92W,115 Технические параметры
NXP USA Inc. BFT92W,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Factory Lead Time | 13 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 25mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 1995 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | HIGH RELIABILITY | |
| HTS Code | 8541.21.00.75 | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BFT92 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Power - Max | 300mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 15mA 10V | |
| Voltage - Collector Emitter Breakdown (Max) | 15V | |
| Transition Frequency | 4000MHz | |
| Frequency - Transition | 4GHz | |
| Power Dissipation-Max (Abs) | 0.3W | |
| Highest Frequency Band | L B | |
| Noise Figure (dB Typ @ f) | 2.5dB ~ 3dB @ 500MHz ~ 1GHz | |
| Power Dissipation Ambient-Max | 0.3W | |
| RoHS Status | ROHS3 Compliant |
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