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BFU530VL Технические параметры

NXP USA Inc.  BFU530VL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Current-Collector (Ic) (Max) 40mA
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Base Part Number BFU530
Pin Count 4
Power - Max 450mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 8V
Gain 15.5dB
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 11GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz
RoHS Status ROHS3 Compliant
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BFU530VL Документы

BFU530VL brand manufacturers: NXP USA Inc., Anli stock, BFU530VL reference price.NXP USA Inc.. BFU530VL parameters, BFU530VL Datasheet PDF and pin diagram description download.You can use the BFU530VL Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFU530VL pin diagram and circuit diagram and usage method of function,BFU530VL electronics tutorials.You can download from the Anli.