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BFU530WX Технические параметры

NXP USA Inc.  BFU530WX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 40mA
Number of Elements 1 Element
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number BFU530
Pin Count 3
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-G3
Configuration SINGLE
Power - Max 450mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 8V
Gain 18.5dB
Voltage - Collector Emitter Breakdown (Max) 12V
Transition Frequency 11000MHz
Frequency - Transition 11GHz
Highest Frequency Band L B
Noise Figure (dB Typ @ f) 0.6dB @ 900MHz
RoHS Status ROHS3 Compliant

BFU530WX Документы

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