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BFU550AR Технические параметры

NXP USA Inc.  BFU550AR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB (SOT23)
Current-Collector (Ic) (Max) 50mA
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2011
Свойство продукта Значение свойства
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BFU550
Power - Max 450mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA 8V
Gain 18dB
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 11GHz
Noise Figure (dB Typ @ f) 0.6dB @ 900MHz
RoHS Status ROHS3 Compliant
Просмотр сходства

BFU550AR Документы

BFU550AR brand manufacturers: NXP USA Inc., Anli stock, BFU550AR reference price.NXP USA Inc.. BFU550AR parameters, BFU550AR Datasheet PDF and pin diagram description download.You can use the BFU550AR Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFU550AR pin diagram and circuit diagram and usage method of function,BFU550AR electronics tutorials.You can download from the Anli.