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BFU550R Технические параметры

NXP USA Inc.  BFU550R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Supplier Device Package SOT-143B
Current-Collector (Ic) (Max) 50mA
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2011
Свойство продукта Значение свойства
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BFU550
Power - Max 450mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA 8V
Gain 21dB
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 11GHz
Noise Figure (dB Typ @ f) 0.7dB @ 900MHz
RoHS Status ROHS3 Compliant
Просмотр сходства

BFU550R Документы

BFU550R brand manufacturers: NXP USA Inc., Anli stock, BFU550R reference price.NXP USA Inc.. BFU550R parameters, BFU550R Datasheet PDF and pin diagram description download.You can use the BFU550R Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFU550R pin diagram and circuit diagram and usage method of function,BFU550R electronics tutorials.You can download from the Anli.