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BFU550XVL Технические параметры
NXP USA Inc. BFU550XVL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Factory Lead Time | 13 Weeks | |
| Mounting Type | Surface Mount, Gull Wing | |
| Package / Case | TO-253-4, TO-253AA | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 50mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2011 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| Additional Feature | LOW NOISE | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BFU550 | |
| Pin Count | 4 | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| JESD-30 Code | R-PDSO-G4 | |
| Configuration | SINGLE | |
| Power - Max | 450mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 15mA 8V | |
| Gain | 15.5dB | |
| Voltage - Collector Emitter Breakdown (Max) | 12V | |
| Transition Frequency | 11000MHz | |
| Frequency - Transition | 11GHz | |
| Highest Frequency Band | L B | |
| Noise Figure (dB Typ @ f) | 1.3dB @ 1.8GHz | |
| RoHS Status | ROHS3 Compliant |
Индекс :
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