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BFU580GX Технические параметры

NXP USA Inc.  BFU580GX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Current-Collector (Ic) (Max) 60mA
Operating Temperature -40°C~150°C TJ
Packaging Cut Tape (CT)
Published 2011
Part Status Active
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BFU580
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 30mA 8V
Gain 10.5dB
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 11GHz
Noise Figure (dB Typ @ f) 1.4dB @ 1.8GHz
RoHS Status ROHS3 Compliant
Просмотр сходства

BFU580GX Документы

BFU580GX brand manufacturers: NXP USA Inc., Anli stock, BFU580GX reference price.NXP USA Inc.. BFU580GX parameters, BFU580GX Datasheet PDF and pin diagram description download.You can use the BFU580GX Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFU580GX pin diagram and circuit diagram and usage method of function,BFU580GX electronics tutorials.You can download from the Anli.