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BFU580QX Технические параметры

NXP USA Inc.  BFU580QX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 60mA
Number of Elements 1 Element
Operating Temperature -40°C~150°C TJ
Packaging Cut Tape (CT)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature LOW NOISE
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFU580
Pin Count 3
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSSO-F3
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 30mA 8V
Gain 8.5dB
Voltage - Collector Emitter Breakdown (Max) 12V
Transition Frequency 10500MHz
Frequency - Transition 10.5GHz
Highest Frequency Band L B
Noise Figure (dB Typ @ f) 1.3dB @ 1.8GHz
RoHS Status ROHS3 Compliant

BFU580QX Документы

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