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NXP USA Inc. BFU580QX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Bipolar (BJT) - RF | |
Марка | ||
Factory Lead Time | 13 Weeks | |
Mounting Type | Surface Mount | |
Package / Case | TO-243AA | |
Surface Mount | YES | |
Transistor Element Material | SILICON | |
Current-Collector (Ic) (Max) | 60mA | |
Number of Elements | 1 Element | |
Operating Temperature | -40°C~150°C TJ | |
Packaging | Cut Tape (CT) | |
Published | 2011 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
Additional Feature | LOW NOISE | |
Terminal Position | SINGLE | |
Terminal Form | FLAT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Свойство продукта | Значение свойства | |
---|---|---|
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Base Part Number | BFU580 | |
Pin Count | 3 | |
Reference Standard | AEC-Q101; IEC-60134 | |
JESD-30 Code | R-PSSO-F3 | |
Configuration | SINGLE | |
Case Connection | COLLECTOR | |
Power - Max | 1W | |
Transistor Application | AMPLIFIER | |
Polarity/Channel Type | NPN | |
Transistor Type | NPN | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 30mA 8V | |
Gain | 8.5dB | |
Voltage - Collector Emitter Breakdown (Max) | 12V | |
Transition Frequency | 10500MHz | |
Frequency - Transition | 10.5GHz | |
Highest Frequency Band | L B | |
Noise Figure (dB Typ @ f) | 1.3dB @ 1.8GHz | |
RoHS Status | ROHS3 Compliant |