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BFU590QX Технические параметры

NXP USA Inc.  BFU590QX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 200mA
Number of Elements 1 Element
Operating Temperature -40°C~150°C TJ
Packaging Cut Tape (CT)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFU590
Pin Count 3
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSSO-F3
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 2W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 80mA 8V
Gain 6.5dB
Voltage - Collector Emitter Breakdown (Max) 12V
Transition Frequency 8000MHz
Frequency - Transition 8GHz
Highest Frequency Band L B
RoHS Status ROHS3 Compliant
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BFU590QX Документы

BFU590QX brand manufacturers: NXP USA Inc., Anli stock, BFU590QX reference price.NXP USA Inc.. BFU590QX parameters, BFU590QX Datasheet PDF and pin diagram description download.You can use the BFU590QX Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFU590QX pin diagram and circuit diagram and usage method of function,BFU590QX electronics tutorials.You can download from the Anli.