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BFU610F,115 Технические параметры

NXP USA Inc.  BFU610F,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SOT-343F
Current-Collector (Ic) (Max) 10mA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Base Part Number BFU610
Pin Count 4
Power - Max 136mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 1mA 2V
Gain 13.5dB ~ 23.5dB
Voltage - Collector Emitter Breakdown (Max) 5.5V
Frequency - Transition 15GHz
Source Url Status Check Date 2013-06-14 00:00:00
Noise Figure (dB Typ @ f) 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz
RoHS Status ROHS3 Compliant
Просмотр сходства

BFU610F,115 Документы

BFU610F,115 brand manufacturers: NXP USA Inc., Anli stock, BFU610F,115 reference price.NXP USA Inc.. BFU610F,115 parameters, BFU610F,115 Datasheet PDF and pin diagram description download.You can use the BFU610F,115 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFU610F,115 pin diagram and circuit diagram and usage method of function,BFU610F,115 electronics tutorials.You can download from the Anli.