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BFU725F,115 Технические параметры
NXP USA Inc. BFU725F,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | SOT-343F | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON GERMANIUM | |
| Current-Collector (Ic) (Max) | 40mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2002 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | BFU725 | |
| Pin Count | 4 | |
| JESD-30 Code | R-PDSO-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | EMITTER | |
| Power - Max | 136mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA 2V | |
| Gain | 10dB ~ 24dB | |
| Voltage - Collector Emitter Breakdown (Max) | 2.8V | |
| Transition Frequency | 70000MHz | |
| Frequency - Transition | 70GHz | |
| Power Dissipation-Max (Abs) | 0.136W | |
| Source Url Status Check Date | 2013-06-14 00:00:00 | |
| Highest Frequency Band | C B | |
| Noise Figure (dB Typ @ f) | 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz | |
| RoHS Status | ROHS3 Compliant |
Индекс :
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