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BFU725F/N1,115 Технические параметры

NXP USA Inc.  BFU725F/N1,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SOT-343 Reverse Pinning
Current-Collector (Ic) (Max) 40mA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Base Part Number BFU725
Pin Count 4
Power - Max 136mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 10mA 2V
Gain 10dB ~ 24dB
Voltage - Collector Emitter Breakdown (Max) 2.8V
Frequency - Transition 55GHz
Source Url Status Check Date 2013-06-14 00:00:00
Noise Figure (dB Typ @ f) 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
RoHS Status ROHS3 Compliant
Просмотр сходства

BFU725F/N1,115 Документы

BFU725F/N1,115 brand manufacturers: NXP USA Inc., Anli stock, BFU725F/N1,115 reference price.NXP USA Inc.. BFU725F/N1,115 parameters, BFU725F/N1,115 Datasheet PDF and pin diagram description download.You can use the BFU725F/N1,115 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFU725F/N1,115 pin diagram and circuit diagram and usage method of function,BFU725F/N1,115 electronics tutorials.You can download from the Anli.